Experimental demonstration of skyrmionic magnetic tunnel junction at room temperature

Sai Li; Ao Du; Yadong Wang; Xinran Wang; Xueying Zhang; Houyi Cheng; Wenlong Cai; Shiyang Lu; Kaihua Cao; Biao Pan; Na Lei; Wang Kang; Junming Liu; Albert Fert; Zhipeng Hou; Weisheng Zhao

doi:10.1016/j.scib.2022.01.016

Experimental demonstration of skyrmionic magnetic tunnel junction at room temperature

Sci Bull (Beijing). 2022 Apr 15;67(7):691-699. doi: 10.1016/j.scib.2022.01.016. Epub 2022 Jan 15.

Authors

Sai Li¹, Ao Du², Yadong Wang³, Xinran Wang⁴, Xueying Zhang², Houyi Cheng⁴, Wenlong Cai⁴, Shiyang Lu⁵, Kaihua Cao², Biao Pan⁴, Na Lei⁴, Wang Kang⁴, Junming Liu³, Albert Fert⁴, Zhipeng Hou⁶, Weisheng Zhao⁷

Affiliations

¹ Fert Beijing Institute, MIIT Key Laboratory of Spintronics, School of Integrated Circuit Science and Engineering, Beihang University, Beijing 100191, China; Shenyuan Honors College, Beihang University, Beijing 100191, China.
² Fert Beijing Institute, MIIT Key Laboratory of Spintronics, School of Integrated Circuit Science and Engineering, Beihang University, Beijing 100191, China; Beihang-Geortek Joint Microelectronics Institute, Qingdao Research Institute, Beihang University, Qingdao 266104, China.
³ Guangdong Provincial Key Laboratory of Optical Information Materials and Technology & Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China; Laboratory of Solid State Microstructures and Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 211102, China.
⁴ Fert Beijing Institute, MIIT Key Laboratory of Spintronics, School of Integrated Circuit Science and Engineering, Beihang University, Beijing 100191, China.
⁵ Beihang-Geortek Joint Microelectronics Institute, Qingdao Research Institute, Beihang University, Qingdao 266104, China.
⁶ Guangdong Provincial Key Laboratory of Optical Information Materials and Technology & Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China. Electronic address: houzp@m.scnu.edu.cn.
⁷ Fert Beijing Institute, MIIT Key Laboratory of Spintronics, School of Integrated Circuit Science and Engineering, Beihang University, Beijing 100191, China; Beihang-Geortek Joint Microelectronics Institute, Qingdao Research Institute, Beihang University, Qingdao 266104, China. Electronic address: weisheng.zhao@buaa.edu.cn.

PMID: 36546133
DOI: 10.1016/j.scib.2022.01.016

Abstract

Chiral magnetic skyrmions are topological swirling spin textures that hold promise for future information technology. The electrical nucleation and motion of skyrmions have been experimentally demonstrated in the last decade, while electrical detection compatible with semiconductor processes has not been achieved, and this is considered one of the most crucial gaps regarding the use of skyrmions in real applications. Here, we report the direct observation of nanoscale skyrmions in CoFeB/MgO-based magnetic tunnel junction devices at room temperature. High-resolution magnetic force microscopy imaging and tunneling magnetoresistance measurements are used to illustrate the electrical detection of skyrmions, which are stabilized under the cooperation of interfacial Dzyaloshinskii-Moriya interaction, perpendicular magnetic anisotropy, and dipolar stray field. This skyrmionic magnetic tunnel junction shows a stable nonlinear multilevel resistance thanks to its topological nature and tunable density of skyrmions under current pulse excitation. These features provide important perspectives for spintronics to realize high-density memory and neuromorphic computing.

Keywords: High-density memory; Magnetic skyrmion; Nanodevice; Neuromorphic computing; Topological spin texture.