Improved Subthreshold Characteristics by Back-Gate Coupling on Ferroelectric ETSOI FETs

Zhaohao Zhang; Yudong Li; Jing Xu; Bo Tang; Jinjuan Xiang; Junjie Li; Qingzhu Zhang; Zhenhua Wu; Huaxiang Yin; Jun Luo; Wenwu Wang

doi:10.1186/s11671-022-03767-4

Improved Subthreshold Characteristics by Back-Gate Coupling on Ferroelectric ETSOI FETs

Nanoscale Res Lett. 2022 Dec 15;17(1):124. doi: 10.1186/s11671-022-03767-4.

Authors

Zhaohao Zhang^#^{1

2

3}, Yudong Li^#^{1

2

3}, Jing Xu^{1

2

3}, Bo Tang^{1

2

3}, Jinjuan Xiang^{1

2

3}, Junjie Li^{1

2

3}, Qingzhu Zhang^{4

5

6}, Zhenhua Wu, Huaxiang Yin^{7

8

9}, Jun Luo^{1

2

3}, Wenwu Wang^{1

2

3}

Affiliations

¹ Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, CAS, Beijing, China.
² Changcheng Institute of Metrology & Measurement, Beijing, China.
³ School of Integrated Circuits of University of Chinese Academy of Sciences, Beijing, 100049, China.
⁴ Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, CAS, Beijing, China. zhangqingzhu@ime.ac.cn.
⁵ Changcheng Institute of Metrology & Measurement, Beijing, China. zhangqingzhu@ime.ac.cn.
⁶ School of Integrated Circuits of University of Chinese Academy of Sciences, Beijing, 100049, China. zhangqingzhu@ime.ac.cn.
⁷ Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, CAS, Beijing, China. yinhuaxiang@ime.ac.cn.
⁸ Changcheng Institute of Metrology & Measurement, Beijing, China. yinhuaxiang@ime.ac.cn.
⁹ School of Integrated Circuits of University of Chinese Academy of Sciences, Beijing, 100049, China. yinhuaxiang@ime.ac.cn.

^# Contributed equally.

Abstract

In this work, extremely thin silicon-on-insulator field effective transistors (ETSOI FETs) are fabricated with an ultra-thin 3 nm ferroelectric (FE) hafnium zirconium oxides (Hf_0.5Z_r0.5O₂) layer. Furthermore, the subthreshold characteristics of the devices with double gate modulation are investigated extensively. Contributing to the advantages of the back-gate voltage coupling effects, the minimum subthreshold swing (SS) value of a 40 nm ETSOI device could be adjusted from the initial 80.8-50 mV/dec, which shows ultra-steep SS characteristics. To illustrate this electrical character, a simple analytical model based on the transient Miller model is demonstrated. This work shows the feasibility of FE ETSOI FET for ultra-low-power applications with dynamic threshold adjustment.

Keywords: Back gate; Domain switching; ETSOI; Hf0.5Zr0.5O2; Subthreshold swing.

Abstract

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