Facilitating the Carrier Transport Kinetics at the CsPbBr3/Carbon Interface through SbX3 (X = Cl, Br, I) Passivation

Wenwen Liu; Teng Zhang; Baohua Zhao; Chengben Liu; Youru Bai; Zhi Li; Shihui Zhu; Tailin Wang; Xinyu Sun; Heyuan Liu; Zhaobin Liu; Yanli Chen; Xiyou Li

doi:10.1021/acsami.2c17046

Facilitating the Carrier Transport Kinetics at the CsPbBr₃/Carbon Interface through SbX₃ (X = Cl, Br, I) Passivation

ACS Appl Mater Interfaces. 2022 Dec 28;14(51):57362-57370. doi: 10.1021/acsami.2c17046. Epub 2022 Dec 14.

Authors

Wenwen Liu¹, Teng Zhang¹, Baohua Zhao¹, Chengben Liu¹, Youru Bai¹, Zhi Li², Shihui Zhu¹, Tailin Wang¹, Xinyu Sun¹, Heyuan Liu¹, Zhaobin Liu², Yanli Chen¹, Xiyou Li¹

Affiliations

¹ School of Materials Science and Engineering, College of Chemistry and Chemical Engineering, College of New Energy, China University of Petroleum (East China), Qingdao 266580, China.
² Shandong Energy Group Co., Ltd., 19/F, High Salary Wanda J3 Office Building, 57-1, Gongye South Road, High Tech Zone, Jinan City, Shandong Province 250101, China.

PMID: 36516001
DOI: 10.1021/acsami.2c17046

Abstract

The nonradiative carrier recombination at the perovskite/carrier selective layer (CSL) interface was accounted for the inferior power conversion efficiency (PCE) of perovskite solar cells (PSCs), especially rigid all-inorganic perovskite (CsPbI₃ and CsPbBr₃). In this study, targeting the poor interface, we introduce SbX₃ (X = Cl, Br, I) surface passivation at the CsPbBr₃/carbon interface. Smoothed compressive strain, reduced defect density, and enhanced energy-level alignment were achieved simultaneously, facilitating carrier extraction at the selective interface. With the simple aqueous solution-based two-step process, the PCE of our SbI₃ passivated carbon-based CsPbBr₃ PSCs has increased from 7.81% (without passivation) to 9.69%, a ∼25% enhancement. Specifically, V_oc (1.657 V) of the SbI₃-passivated cells was much higher than that of the control ones (1.488 V), confirming the ameliorated interface. Finally, our unencapsulated SbI₃ passivated devices maintain 90% of their initial PCEs while left in the air for 30 days with a relative humidity of 60%. To conclude, we present an interfacial carrier extraction-enhanced strategy for preparing high-performance and stable CsPbBr₃-based PSCs.

Keywords: all-inorganic carbon-based PSCs; aqueous phase deposition; enhanced energy-level alignment; reduced defect density; smoothed compressive strain.