Organic Disordered Semiconductors as Networks Embedded in Space and Energy

Nanomaterials (Basel). 2022 Dec 1;12(23):4279. doi: 10.3390/nano12234279.

Abstract

Organic disordered semiconductors have a growing importance because of their low cost, mechanical flexibility, and multiple applications in thermoelectric devices, biosensors, and optoelectronic devices. Carrier transport consists of variable-range hopping between localized quantum states, which are disordered in both space and energy within the Gaussian disorder model. In this paper, we model an organic disordered semiconductor system as a network embedded in both space and energy so that a node represents a localized state while a link encodes the probability (or, equivalently, the Miller-Abrahams hopping rate) for carriers to hop between nodes. The associated network Laplacian matrix allows for the study of carrier dynamics using edge-centric random walks, in which links are activated by the corresponding carrier hopping rates. Our simulation work suggests that at room temperature the network exhibits a strong propensity for small-network nature, a beneficial property that in network science is related to the ease of exchanging information, particles, or energy in many different systems. However, this is not the case at low temperature. Our analysis suggests that there could be a parallelism between the well-known dependence of carrier mobility on temperature and the potential emergence of the small-world property with increasing temperature.

Keywords: disordered organic semiconductors; hopping transport; space–energy embedded networks; variable-range hopping.