Submicron-Size Emitters of the 1.2-1.55 μm Spectral Range Based on InP/InAsP/InP Nanostructures Integrated into Si Substrate

Ivan Melnichenko; Eduard Moiseev; Natalia Kryzhanovskaya; Ivan Makhov; Alexey Nadtochiy; Nikolay Kalyuznyy; Valeriy Kondratev; Alexey Zhukov

doi:10.3390/nano12234213

Submicron-Size Emitters of the 1.2-1.55 μm Spectral Range Based on InP/InAsP/InP Nanostructures Integrated into Si Substrate

Nanomaterials (Basel). 2022 Nov 27;12(23):4213. doi: 10.3390/nano12234213.

Authors

Ivan Melnichenko¹, Eduard Moiseev¹, Natalia Kryzhanovskaya¹, Ivan Makhov¹, Alexey Nadtochiy², Nikolay Kalyuznyy², Valeriy Kondratev³, Alexey Zhukov¹

Affiliations

¹ International Laboratory of Quantum Optoelectronics, HSE University, 16 Soyuza Pechatnikov, St. Petersburg 190008, Russia.
² Ioffe Institute, Politehnicheskaya 26, St. Petersburg 194021, Russia.
³ Center for Nanotechnologies, Alferov University, Khlopina 8/3, St. Petersburg 194021, Russia.

Abstract

We study photoluminescence of InP/InAsP/InP nanostructures monolithically integrated to a Si(100) substrate. The InP/InAsP/InP nanostructures were grown in pre-formed pits in the silicon substrate using an original approach based on selective area growth and driven by a molten alloy in metal-organic vapor epitaxy method. This approach provides the selective-area synthesis of the ordered emitters arrays on Si substrates. The obtained InP/InAsP/InP nanostructures have a submicron size. The individual InP/InAsP/InP nanostructures were investigated by photoluminescence spectroscopy at room temperature. The tuning of the emission line in the spectral range from 1200 nm to 1550 nm was obtained depending on the growth parameters. These results provide a path for the growth on Si(100) substrate of position-controlled heterojunctions based on InAs_1-xP_x for nanoscale optical devices operating at the telecom band.

Keywords: III–V nanostructures; InAsP/InP; photoluminescence; silicon photonics.

Abstract

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