Fabrication of Ga2O3 Schottky Barrier Diode and Heterojunction Diode by MOCVD

Teng Jiao; Wei Chen; Zhengda Li; Zhaoti Diao; Xinming Dang; Peiran Chen; Xin Dong; Yuantao Zhang; Baolin Zhang

doi:10.3390/ma15238280

Fabrication of Ga₂O₃ Schottky Barrier Diode and Heterojunction Diode by MOCVD

Materials (Basel). 2022 Nov 22;15(23):8280. doi: 10.3390/ma15238280.

Authors

Teng Jiao¹, Wei Chen¹, Zhengda Li¹, Zhaoti Diao¹, Xinming Dang¹, Peiran Chen¹, Xin Dong¹, Yuantao Zhang¹, Baolin Zhang¹

Affiliation

¹ State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Qianjin Street 2699, Changchun 130012, China.

Abstract

In this article, we reported on a Ga₂O₃-based Schottky barrier diode and heterojunction diode from MOCVD. The Si-doped n-type Ga₂O₃ drift layer, grown by MOCVD, exhibited high crystal quality, flat surfaces, and uniform doping. The distribution of unintentional impurities in the films was studied. Then nickel Schottky barrier diode and p-NiO/n-Ga₂O₃ heterojunction diode were fabricated and measured. Without any electric field management structure, the Schottky barrier diode and heterojunction diode have specific resistances of 3.0 mΩ·cm² and 6.2 mΩ·cm², breakdown voltages of 380 V and 740 V, thus yielding power figures of merit of 48 MW·cm^-2 and 88 MW·cm^-2, respectively. Besides, both devices exhibit a current on/off ratio of more than 10¹⁰. This shows the prospect of MOCVD in power device manufacture.

Keywords: Ga2O3; MOCVD; Schottky barrier diodes; heterojunction.

Abstract

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