Ultralow-Power RRAM with a High Switching Ratio Based on the Large van der Waals Interstice Radius of TMDs

Jiaying Jian; Pengfan Dong; Zengyun Jian; Ting Zhao; Chen Miao; Honglong Chang; Jian Chen; Yan-Feng Chen; Yan-Bin Chen; Hao Feng; Brice Sorli

doi:10.1021/acsnano.2c06728

Ultralow-Power RRAM with a High Switching Ratio Based on the Large van der Waals Interstice Radius of TMDs

ACS Nano. 2022 Dec 27;16(12):20445-20456. doi: 10.1021/acsnano.2c06728. Epub 2022 Dec 5.

Authors

Affiliations

¹ Shaanxi Key Laboratory of Photoelectric Functional Materials and Devices, Xi'an Technological University, Xi'an710021, China.
² School of Mechanical Engineering, Northwestern Polytechnical University, Xi'an710072, China.
³ National Laboratory of Solid State Microstructures and Department of Materials Science and Engineering, College of Engineering and Applied Sciences, Nanjing University, Nanjing210093, China.
⁴ Institute of Electronics and Systems, University of Montpellier, Montpellier34095, France.

PMID: 36468939
DOI: 10.1021/acsnano.2c06728

Abstract

Low power and high switching ratio are the development direction of the next generation of resistive random access memory (RRAM). Previous techniques could not increase the switching ratio while reducing the SET power. Here, we report a method to fabricate low-power and high-switching-ratio RRAM by adjusting the interstice radius (r_g) between the van der Waals (vdW) layers of transitional-metal dichalcogenides (TMDs), which simultaneously increases the switching ratio and reduces the SET power. The SET voltage, SET power, switching ratio and endurance of the device are strongly correlated with r_g. When the ratio of r_g to the radius of the metal ions that form the conductive filaments (r_g/r_Ag⁺) is near 1, the SET voltage and SET power vertically decrease while the switching ratio vertically rises with increasing r_g/r_Ag⁺. For the fabricated Ag/[SnS₂/poly(methyl methacrylate)]/Cu RRAM with an r_g/r_Ag⁺ of 1.04, the SET voltage, SET power and switching ratio are 0.14 V, 10^-10 W and 10⁶, respectively. After 10⁴ switching cycles and a 10⁴ s retention time, the switching ratio of the device can still be stable above 10⁶. Bending has no influence on the performance of the device when the bending radius is not <2 mm.

Keywords: high switching ratio; resistive random access memory; transitional-metal dichalcogenides; ultralow-power; van der Waals interstice radius.