In this work, a hybrid-phase transition field-effects-transistor (hyper-FET) integrated with phase-transition materials (PTM) and a multi-nanosheet FET (mNS-FET) at the 3 nm technology node were analyzed at the device and circuit level. Through this, a benchmark was performed for presenting device design guidelines and for using ultra-low-power applications. We present an optimization flow considering hyper-FET characteristics at the device and circuit level, and analyze hyper-FET performance according to the phase transition time (TT) and baseline-FET off-leakage current (IOFF) variations of the PTM. As a result of inverter ring oscillator (INV RO) circuit analysis, the optimized hyper-FET increases speed by +8.74% and reduces power consumption by -16.55%, with IOFF = 5 nA of baseline-FET and PTM TT = 50 ps compared to the conventional mNS-FET in the ultra-low-power region. As a result of SRAM circuit analysis, the read static noise margin is improved by 43.9%, and static power is reduced by 58.6% in the near-threshold voltage region when the PTM is connected to the pull-down transistor source terminal of 6T SRAM for high density. This is achieved at 41% read current penalty.
Keywords: Boltzmann limit; hybrid-phase-transition FETs (hyper-FET); low power application; phase-transition-materials (PTM); steep switching device.