A Simple Doping Process Achieved by Modifying the Passivation Layer for Self-Aligned Top-Gate In-Ga-Zn-O Thin-Film Transistors at 200 °C

Cong Peng; Huixue Huang; Meng Xu; Longlong Chen; Xifeng Li; Jianhua Zhang

doi:10.3390/nano12224021

A Simple Doping Process Achieved by Modifying the Passivation Layer for Self-Aligned Top-Gate In-Ga-Zn-O Thin-Film Transistors at 200 °C

Nanomaterials (Basel). 2022 Nov 16;12(22):4021. doi: 10.3390/nano12224021.

Authors

Cong Peng¹, Huixue Huang¹, Meng Xu¹, Longlong Chen¹, Xifeng Li¹, Jianhua Zhang¹

Affiliation

¹ Key Laboratory of Advanced Display and System Applications of Ministry of Education, Shanghai University, Shanghai 200072, China.

Abstract

In this paper, a facile modifying technique of source/drain regions conductivity was proposed for self-aligned top-gate In-Ga-Zn-O (IGZO) thin-film transistors (TFTs) by controlling the process parameter of the passivation layer at relatively low temperatures. The sheet resistance of the source and drain regions of IGZO was approximately 365 Ω/□, and there was no significant change within a month. The device parameters of mobility, threshold voltage, subthreshold swing, and current switching ratio of the fabricated device were 15.15 cm²V^-1s^-1, 0.09 V, 0.15 V/dec, and higher than 10⁹, respectively. The threshold voltage drift under negative bias illumination stress was -0.34 V. In addition, a lower channel width-normalized contact resistance of 9.86 Ω·cm was obtained.

Keywords: InGaZnO; self-aligned top-gate; thin-film transistors.

Abstract

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