Low-Frequency Noise Characteristics in HfO2-Based Metal-Ferroelectric-Metal Capacitors

Ki-Sik Im; Seungheon Shin; Chan-Hee Jang; Ho-Young Cha

doi:10.3390/ma15217475

Low-Frequency Noise Characteristics in HfO₂-Based Metal-Ferroelectric-Metal Capacitors

Materials (Basel). 2022 Oct 25;15(21):7475. doi: 10.3390/ma15217475.

Authors

Ki-Sik Im¹, Seungheon Shin², Chan-Hee Jang², Ho-Young Cha²

Affiliations

¹ Department of Green Semiconductor System, Daegu Campus, Korea Polytechnics, Daegu 41765, Korea.
² School of Electronic and Electrical Engineering, Hongik University, Seoul 04066, Korea.

Abstract

The transport mechanism of HfO₂-based metal-ferroelectric-metal (MFM) capacitors was investigated using low-frequency noise (LFN) measurements for the first time. The current-voltage measurement results revealed that the leakage behavior of the fabricated MFM capacitor was caused by the trap-related Poole-Frenkel transport mechanism, which was confirmed by the LFN measurements. The current noise power spectral densities (S_I) obtained from the LFN measurements followed 1/f noise shapes and exhibited a constant electric field (E) × S_I/I² noise behavior. No polarization dependency was observed in the transport characteristics of the MFM capacitor owing to its structural symmetry.

Keywords: HfO2; ferroelectric; low-frequency noise.

Abstract

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