Enhanced Transverse Seebeck Coefficients in 2D/2D PtSe2/MoS2 Heterostructures Using Wet-Transfer Stacking

Min-Sung Kang; Won-Yong Lee; Young-Gui Yoon; Jae Won Choi; Gil-Sung Kim; Si-Hoo Kim; No-Won Park; Sang-Kwon Lee

doi:10.1021/acsami.2c14065

Enhanced Transverse Seebeck Coefficients in 2D/2D PtSe₂/MoS₂ Heterostructures Using Wet-Transfer Stacking

ACS Appl Mater Interfaces. 2022 Nov 23;14(46):51881-51888. doi: 10.1021/acsami.2c14065. Epub 2022 Nov 10.

Authors

Min-Sung Kang¹, Won-Yong Lee², Young-Gui Yoon¹, Jae Won Choi¹, Gil-Sung Kim¹, Si-Hoo Kim¹, No-Won Park¹, Sang-Kwon Lee¹

Affiliations

¹ Department of Physics and Center for Berry Curvature Based New Phenomena, Chung-Ang University, Seoul06974, Republic of Korea.
² Division of Solid-State Electronics, Department of Electrical Engineering, Uppsala University, Uppsala75103, Sweden.

PMID: 36355622
DOI: 10.1021/acsami.2c14065

Abstract

It is very challenging to estimate thermoelectric (TE) properties when applying millimeter-scale two-dimensional (2D) transition metal dichalcogenide (TMDC) materials to TE device applications, particularly their Seebeck coefficient due to their high intrinsic electrical resistance. This paper proposes an innovative approach to measure large transverse (i.e., in-plane) Seebeck coefficients for 2D TMDC materials by placing a low resistance (LR) semimetallic PtSe₂ film on high-resistance (HR) semiconducting MoS₂ (>10 MΩ), whose internal resistance is too high to measure the Seebeck coefficient, forming a heterojunction structure using wet-transfer stacking. The vertically stacked LR-PtSe₂ (3 nm)/HR-MoS₂ (12 nm) heterostructure film exhibits a high Seebeck coefficient > 190 μV/K up to 5 K temperature difference. This unusual behavior can be explained by an additional Seebeck effect induced at the interface between the LR-2D/HR-2D heterostructure. The proposed stacked LR-PtSe₂/HR-MoS₂ heterostructure film offers promising phenomena 2D/2D materials that enable innovative TE device applications.

Keywords: density of states; heat current; heterojunction structure; molybdenum disulfide; platinum diselenide; transverse Seebeck coefficients; two-dimensional transition-metal dichalcogenide.