NanoSQUIDs are quantum sensors that excel in detecting a small change in magnetic flux with high sensitivity and high spatial resolution. Here, we employ resist-free direct-write Ga+ Focused Ion Beam Induced Deposition (FIBID) techniques to grow W-C nanoSQUIDs, and we investigate their electrical response to changes in the magnetic flux. Remarkably, FIBID allows the fast (3 min) growth of 700 nm × 300 nm nanoSQUIDs based on narrow nanobridges (50 nm wide) that act as Josephson junctions. Albeit the SQUIDs exhibit a comparatively low modulation depth and obtain a high inductance, the observed transfer coefficient (output voltage to magnetic flux change) is comparable to other SQUIDs (up to 1300 μV/Φ 0), which correlates with the high resistivity of W-C in the normal state. We discuss here the potential of this approach to reduce the active area of the nanoSQUIDs to gain spatial resolution as well as their integration on cantilevers for scanning-SQUID applications.
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