Energy Dissipation and Electrical Breakdown in Multilayer PtSe2 Electronics

Xiao Liu; Jinxin Liu; Mengke Fang; Yuehua Wei; Yue Su; Yangbo Chen; Gang Peng; Weiwei Cai; Wei Luo; Chuyun Deng; Xueao Zhang

doi:10.1021/acsami.2c15252

Energy Dissipation and Electrical Breakdown in Multilayer PtSe₂ Electronics

ACS Appl Mater Interfaces. 2022 Nov 16;14(45):51122-51129. doi: 10.1021/acsami.2c15252. Epub 2022 Nov 4.

Authors

Xiao Liu^{1

2}, Jinxin Liu^{1

2}, Mengke Fang^{1

2}, Yuehua Wei³, Yue Su^{1

2}, Yangbo Chen¹, Gang Peng², Weiwei Cai^{1

4}, Wei Luo², Chuyun Deng², Xueao Zhang^{1

4}

Affiliations

¹ College of Physical Science and Technology, Xiamen University, Xiamen361005, China.
² College of Science, National University of Defense Technology, Changsha410073, China.
³ College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha410073, China.
⁴ Jiujiang Research Institute of Xiamen University, Jiujiang332105, China.

PMID: 36331247
DOI: 10.1021/acsami.2c15252

Abstract

Investigating the energy dissipation in micro- and nanoscale is fundamental to improve the performance and reliability of two-dimensional (2D) electronics. Recently, 2D platinum selenide (PtSe₂) has drawn extensive attention in developing next-generation functional devices due to its distinctive fusion of versatile properties. Toward practical applications of PtSe₂ devices, it is essential to understand the interfacial thermal properties between PtSe₂ and its substrate. Among them, the thermal boundary conductance (TBC) has played a critical role for out-of-plane heat dissipation of PtSe₂ devices. Here, we identify the energy dissipation behavior of multilayer PtSe₂ devices and extract the actual TBC value of the PtSe₂/SiO₂ interface by Raman thermometry with electrical bias. The obtained TBC value is about 8.6 MW m^-2 K^-1, and it belongs to the low end of as-known solid-solid interfaces, suggesting possible applications regarding thermoelectric devices or others reliant on a large temperature gradient. Furthermore, the maximum current density of the PtSe₂ device determines its threshold power, which is crucial for improving device design and guiding future applications. Therefore, we explore the electrical breakdown profile of the multilayer PtSe₂ device, revealing the breakdown current density of 17.7 MA cm^-2 and threshold power density of 0.2 MW cm^-2, which are larger than typical values for commonly used aluminum and copper. These results provide key insights into the energy dissipation of PtSe₂ devices and make PtSe₂ an excellent candidate for thermal confinement applications and nanometer-thin interconnects, which will benefit the development of energy-efficient functional 2D devices.

Keywords: PtSe2; electrical breakdown; energy dissipation; interconnects; thermal boundary conductance.