Engineering the synthesized colloidal CuInS2 passivation layer in interface modification for CdS/CdSe quantum dot solar cells

Zhijun Liang; Yifan Chen; Rui Zhang; Kai Zhang; Kaikai Ba; Yanhong Lin; Dejun Wang; Tengfeng Xie

doi:10.1039/d2dt02555h

Engineering the synthesized colloidal CuInS₂ passivation layer in interface modification for CdS/CdSe quantum dot solar cells

Dalton Trans. 2022 Nov 21;51(45):17292-17300. doi: 10.1039/d2dt02555h.

Authors

Zhijun Liang¹, Yifan Chen², Rui Zhang¹, Kai Zhang¹, Kaikai Ba¹, Yanhong Lin¹, Dejun Wang¹, Tengfeng Xie¹

Affiliations

¹ Institute of Physical Chemistry, College of Chemistry, Jilin University, Changchun 130012, P. R. China. xietf@jlu.edu.cn.
² Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong.

PMID: 36317601
DOI: 10.1039/d2dt02555h

Abstract

Interface modification is an important means to enhance the photovoltaic performance of quantum dot sensitized solar cells (QDSCs). The TiO₂/CdS/CdSe solar cells are sensitized with CdS QDs and CdSe QDs, which inevitably introduces a new interface to form a recombination center. Therefore, it is necessary to coat a passivation layer in order to effectively inhibit charge recombination at the CdS/CdSe interface. In this work, CuInS₂ (CIS) has been introduced into the CdS/CdSe QD system as an inner passivation layer and the CdS/CIS/CdSe photoanode structure has been fabricated in an environmentally friendly manner. The extracted charge amount (Q) is used to express the charge separation efficiency, indicating that we have obtained outstanding charge extraction efficiency in CIS based CdS/CdSe QDSCs. As a result, the photocurrent density of the TiO₂/CdS/CIS/CdSe photoanode significantly has increased from 19.01 mA cm^-2 to 22.74 mA cm^-2 (TiO₂/CdS/CdSe photoanode), which demonstrates a higher photoconversion efficiency of 4.52% in comparison with that of TiO₂/CdS/CdSe photoanode.