Fabrication and enhanced photoelectric properties of a novel Bi9O7.5S6/CdS composite film

Yongzheng Fang; Jing Wang; Zhanqiang Liu; Guoying Zhao; Yanwei Huang; Jingshan Hou; Ganghua Zhang

doi:10.1039/d2dt02931f

Fabrication and enhanced photoelectric properties of a novel Bi₉O_7.5S₆/CdS composite film

Dalton Trans. 2022 Nov 15;51(44):17022-17029. doi: 10.1039/d2dt02931f.

Authors

Yongzheng Fang¹, Jing Wang¹, Zhanqiang Liu², Guoying Zhao¹, Yanwei Huang¹, Jingshan Hou¹, Ganghua Zhang¹

Affiliations

¹ School of Materials Science and Engineering, Shanghai Institute of Technology, Shanghai, 201418, P. R. China. ganghuazhang@sit.edu.cn.
² Department of Materials Chemistry, Huzhou University, 759 East Erhuan Road, Huzhou 313000, P. R. China. Liuzq@zjhu.edu.cn.

PMID: 36301175
DOI: 10.1039/d2dt02931f

Abstract

Layered bismuth oxychalcogenides have been demonstrated as potential candidates for high-speed and low-power electronics due to their outstanding environmental stability and high carrier mobility, but the photoelectric performance of bulk species is still far from satisfactory. Herein, a novel Bi₉O_7.5S₆/CdS composite film with a type-II heterojunction has been successfully prepared by combining chemical bath deposition (CBD) and spin-coating technologies. The structure, morphology, optical and photoelectric properties of the samples were investigated systematically. The photoelectric current of the Bi₉O_7.5S₆/CdS composite film was obtained as 32.49 μA cm^-2 at 1 V, which is about 13.9-fold and 3.3-fold higher than those of bare Bi₉O_7.5S₆ and CdS. An enhanced photoelectric response and photostability were achieved in the Bi₉O_7.5S₆/CdS composite film, and can be appropriately attributed to the improved separation and transfer of photogenerated carriers driven by the type-II heterojunction. This work offers a promising route to develop high-performance visible-light photoelectric devices with type-II heterojunctions.