Nanostructured MoS2 and WS2 Photoresponses under Gas Stimuli

Mohamed A Basyooni; Shrouk E Zaki; Nada Alfryyan; Mohammed Tihtih; Yasin Ramazan Eker; Gamal F Attia; Mücahit Yılmaz; Şule Ateş; Mohamed Shaban

doi:10.3390/nano12203585

Nanostructured MoS₂ and WS₂ Photoresponses under Gas Stimuli

Nanomaterials (Basel). 2022 Oct 13;12(20):3585. doi: 10.3390/nano12203585.

Authors

Mohamed A Basyooni^{1

2}, Shrouk E Zaki^{1

3}, Nada Alfryyan⁴, Mohammed Tihtih⁵, Yasin Ramazan Eker⁶, Gamal F Attia⁷, Mücahit Yılmaz², Şule Ateş⁸, Mohamed Shaban^{9

10}

Affiliations

¹ Department of Nanotechnology and Advanced Materials, Graduate School of Applied and Natural Science, Selçuk University, Konya 42030, Turkey.
² Department of Nanoscience and Nanoengineering, Institute of Science and Technology, University of Necmettin Erbakan, Konya 42060, Turkey.
³ Theoretical Physics Department, National Research Center, Cairo 12622, Egypt.
⁴ Department of Physics, College of Sciences, Princess Nourah bint Abdulrahman University, P.O. Box 84428, Riyadh 11671, Saudi Arabia.
⁵ Institute of Ceramics and Polymer Engineering, University of Miskolc, H-3515 Miskolc, Hungary.
⁶ Department of Metallurgy and Material Engineering, Faculty of Engineering and Architecture, Necmettin Erbakan University, Konya 42060, Turkey.
⁷ Department of Solar and Space Research, National Research Institute of Astronomy and Geophysics (NRIAG), Cairo 11421, Egypt.
⁸ Department of Physics, Faculty of Science, Selçuk University, Konya 42075, Turkey.
⁹ Department of Physics, Faculty of Science, Islamic University of Madinah, P.O. Box 170, AlMadinah Almonawara 42351, Saudi Arabia.
¹⁰ Nanophotonics and Applications Laboratory, Physics Department, Faculty of Science, Beni-Suef University, Beni-Suef 62514, Egypt.

Abstract

This study was on the optoelectronic properties of multilayered two-dimensional MoS₂ and WS₂ materials on a silicon substrate using sputtering physical vapor deposition (PVD) and chemical vapor deposition (CVD) techniques. For the first time, we report ultraviolet (UV) photoresponses under air, CO₂, and O₂ environments at different flow rates. The electrical Hall effect measurement showed the existence of MoS₂ (n-type)/Si (p-type) and WS₂ (P-type)/Si (p-type) heterojunctions with a higher sheet carrier concentration of 5.50 × 10⁵ cm^-2 for WS₂ thin film. The IV electrical results revealed that WS₂ is more reactive than MoS₂ film under different gas stimuli. WS₂ film showed high stability under different bias voltages, even at zero bias voltage, due to the noticeably good carrier mobility of 29.8 × 10² cm²/V. WS₂ film indicated a fast rise/decay time of 0.23/0.21 s under air while a faster response of 0.190/0.10 s under a CO₂ environment was observed. Additionally, the external quantum efficiency of WS₂ revealed a remarkable enhancement in the CO₂ environment of 1.62 × 10⁸ compared to MoS₂ film with 6.74 × 10⁶. According to our findings, the presence of CO₂ on the surface of WS₂ improves such optoelectronic properties as photocurrent gain, photoresponsivity, external quantum efficiency, and detectivity. These results indicate potential applications of WS₂ as a photodetector under gas stimuli for future optoelectronic applications.

Keywords: MoS2; WS2; optoelectronics; thin film; two-dimensional material.

Grants and funding

PNURSP2022R291/Princess Nourah bint Abdulrahman University Researchers Supporting Project number (PNURSP2022R291), Princess Nourah bint Abdulrahman University, Riyadh, Saudi Arabia.