Recent advances in the development of innovative textronic products are often related to the implementation of radio-frequency identification (RFID) technology. Such devices contain components of wireless telecommunications systems, in which radiofrequency circuits should be designed taking into account not only the frequency band or destined application, but also the dielectric properties of the materials. As is known from the theory of RFID systems, the dielectric permittivity and loss angle of the substrates significantly affect the performance of RFID transponders. Therefore, the knowledge on the variability of these parameters is highly important in the context of developing new solutions in textronic devices with the RFID interface. According to the plan of studies, at the beginning, the comprehensive characterization and determination of the dielectric parameters of various types of textile substrates were carried out. On this basis, the influence of fabrics on the performance of textronic RFID (RFIDtex) tags was characterized with numerical calculations. As the RFIDtex transponders proposed by the authors in the patent PL231291 have an outstanding design in which the antenna and the chip are located on physically separated substrates and are galvanically isolated, the special means had to be implemented when creating a numerical model. On the other hand, the great advantage of the developed construction was confirmed. Since the impedance at the chip's terminals is primarily determined by the coupling system, the selected fabrics have relatively low impact on the efficiency of the RFIDtex transponder. Such an effect is impossible to achieve with classical designs of passive or semi-passive transponders. The correctness of the simulations was verified on the exemplary demonstrators, in threshold and rotation measurements performed at the laboratory stand.
Keywords: RFID technology; RFID transponder; dielectric constant; dielectric loss; dielectric properties of textiles; embroidered tag; sewn tag; textronics.