Growing self-assisted GaAs nanowires up to 80 μ m long by molecular beam epitaxy

Jeanne Becdelievre; Xin Guan; I Dudko; Philippe Regreny; Nicolas Chauvin; Gilles Patriarche; Michel Gendry; Alexandre Danescu; José Penuelas

doi:10.1088/1361-6528/ac9c6b

Growing self-assisted GaAs nanowires up to 80 μ m long by molecular beam epitaxy

Nanotechnology. 2022 Nov 11;34(4). doi: 10.1088/1361-6528/ac9c6b.

Authors

Affiliations

¹ Univ Lyon, Ecole Centrale de Lyon, CNRS, INSA Lyon, Université Claude Bernard Lyon, CPE Lyon, INL, UMR5270, F69130 Ecully, France.
² School of Engineering, RMIT University, Melbourne 3001, Victoria, Australia.
³ Functional Materials and Microsystems, Research Group and Micro Nano Research Facility, RMIT University, Melbourne 3001, Victoria, Australia.
⁴ Centre de Nanosciences et de Nanotechnologies-C2N, CNRS, Université Paris-Sud, Université Paris-Saclay, F-91120 Palaiseau, France.

PMID: 36270200
DOI: 10.1088/1361-6528/ac9c6b

Abstract

Ultralong GaAs nanowires were grown by molecular beam epitaxy using the vapor-liquid-solid method. In this ultralong regime we show the existence of two features concerning the growth kinetic and the structural properties. Firstly, we observed a non-classical growth mode, where the axial growth rate is attenuated. Secondly, we observed structural defects at the surface of Wurtzite segments located at the bottom part of the nanowires. We explain these two phenomena as arising from a particular pathway of the group V species, specific to ultralong nanowires. Finally, the optical properties of such ultralong nanowires are studied by photoluminescence experiments.

Keywords: VLS growth; molecular beam epitaxy; ultra-long nanowires.