The miniaturization of silicon-based electronics has motivated considerable efforts in exploring new electronic materials, including two-dimensional semiconductors and halide perovskites, which are usually too delicate to maintain their intrinsic properties during the harsh device fabrication steps. Here we report a convenient plug-and-probe approach for one-step simultaneous van der Waals integration of high-k dielectrics and contacts to enable top-gated transistors with atomically clean and electronically sharp dielectric and contact interfaces. By applying the plug-and-probe top-gate transistor stacks on two-dimensional semiconductors, we demonstrate an ideal subthreshold swing of 60 mV per decade. Using this approach on delicate lead halide perovskite, we realize a high-k top-gate CsPbBr3 transistor with a low operating voltage and a very high two-terminal field-effect mobility of 32 cm2 V-1 s-1. This approach can be extended to centimetre-scale MoS2 and perovskite and generate top-gated transistor arrays, offering a rapid and convenient way of accessing intrinsic properties of delicate emerging materials.
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