Multiphotoconductance Levels of the Organic Semiconductor of Polyimide-Based Memristor Induced by Interface Charges

Wenhua Wang; Guangdong Zhou; Yuchen Wang; Bingtao Yan; Bai Sun; Shukai Duan; Qunliang Song

doi:10.1021/acs.jpclett.2c02651

Multiphotoconductance Levels of the Organic Semiconductor of Polyimide-Based Memristor Induced by Interface Charges

J Phys Chem Lett. 2022 Oct 27;13(42):9941-9949. doi: 10.1021/acs.jpclett.2c02651. Epub 2022 Oct 19.

Authors

Wenhua Wang¹, Guangdong Zhou², Yuchen Wang¹, Bingtao Yan², Bai Sun³, Shukai Duan², Qunliang Song¹

Affiliations

¹ School of Materials and Energy, Southwest University, Chongqing, Chongqing400715, China.
² College of Artificial Intelligence, Southwest University, Chongqing, Chongqing400715, China.
³ Frontier Institute of Science and Technology (FIST), Xi'an Jiaotong University, No.28, Xianning West Road, Xi'an, Shanxi710049, P.R. China.

PMID: 36260056
DOI: 10.1021/acs.jpclett.2c02651

Abstract

A memristor with Au/polyimide (PI)/Au structure is prepared by magnetron sputtering to investigate the multiphotoconductance resistive switching (RS) memory behavior. The PI-based memristor presents stable bipolar RS memory and is sensitive to visible light. Four discrete conductance states in both high-resistance state (HRS) and low-resistance state (LRS) are obtained when illuminating by 365, 550, 590, and 780 nm light. Electron trapping and detrapping from the defects distributed at interfaces and the PI switching layer are responsible for the observed RS memory behavior. The enhanced trapping and detrapping process by light illumination is responsible for the multiconductance states. This work provides the possibility for further development of neuromorphic vision sensors using an organic semiconductor-based memristor.