The interfaces between inorganic selective contacts and halide perovskites (HaPs) are possibly the greatest challenge for making stable and reproducible solar cells with these materials. NiOx, an attractive hole-transport layer as it fits the electronic structure of HaPs, is highly stable and can be produced at a low cost. Furthermore, NiOx can be fabricated via scalable and controlled physical deposition methods such as RF sputtering to facilitate the quest for scalable, solvent-free, vacuum-deposited HaP-based solar cells (PSCs). However, the interface between NiOx and HaPs is still not well-controlled, which leads at times to a lack of stability and Voc losses. Here, we use RF sputtering to fabricate NiOx and then cover it with a NiyN layer without breaking vacuum. The NiyN layer protects NiOx doubly during PSC production. Firstly, the NiyN layer protects NiOx from Ni3+ species being reduced to Ni2+ by Ar plasma, thus maintaining NiOx conductivity. Secondly, it passivates the interface between NiOx and the HaPs, retaining PSC stability over time. This double effect improves PSC efficiency from an average of 16.5% with a 17.4% record cell to a 19% average with a 19.8% record cell and increases the device stability.
Keywords: halide perovskites; interface; nickel nitride; nickel oxide; passivation; solar cells.