2D BiCuSeO is an intrinsic p-type degenerate semiconductor due to its self-doping effect, which possesses great potential to fabricate high-performance 2D-2D tunnel field-effect transistors (TFETs). However, the controllable synthesis of multinary 2D materials by chemical vapor deposition (CVD) is still a challenge due to the restriction of thermodynamics. Here, the CVD synthesis of quaternary 2D BiCuSeO nanosheets is realized. As-grown BiCuSeO nanosheets with thickness down to ≈6.1 nm (≈7 layers) and domain size of ≈277 µm show excellent ambient stability. Intrinsic p-type degeneracy of BiCuSeO, capable of maintaining even in a few layers, is comprehensively unveiled. By varying the thicknesses and temperatures, the carrier concentration of BiCuSeO nanosheets can be adjusted in the range of 1019 to 1021 cm-3 , and the Hall mobility of BiCuSeO is ≈191 cm2 V-1 s-1 (at 2 K). Furthermore, taking advantage of the p-type degeneracy of BiCuSeO, a prototypical BiCuSeO/MoS2 TFET is fabricated. The emergence of the negative differential resistance trend and multifunctional diodes by modulating the gate voltage and temperature reveal the great practical implementation potential of BiCuSeO nanosheets. These results pave way for the CVD synthesis of multinary 2D materials and rational design of high-performance tunnel devices.
Keywords: 2D materials; BiCuSeO; chemical vapor deposition; intrinsic degeneracy; tunnel field-effect transistors.
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