Bimetallic Alloys b-AsxP1- x at High Concentration Differences: Ideal for Photonic Devices

Fangqi Liu; Qiang Yu; Junfei Xue; Bowang Shu; Cangdong Zheng; Haiqin Deng; Xiaolin Zhang; Pengwei Gong; Mingyan Chen; Hai Lin; Jian Wang; Sicong Zhu; Jian Wu

doi:10.1021/acs.jpclett.2c01973

Bimetallic Alloys b-As_xP_{1- x} at High Concentration Differences: Ideal for Photonic Devices

J Phys Chem Lett. 2022 Oct 13;13(40):9501-9509. doi: 10.1021/acs.jpclett.2c01973. Epub 2022 Oct 6.

Authors

Fangqi Liu^{1

2}, Qiang Yu^{2

3}, Junfei Xue⁴, Bowang Shu², Cangdong Zheng⁵, Haiqin Deng², Xiaolin Zhang⁵, Pengwei Gong⁵, Mingyan Chen⁶, Hai Lin⁷, Jian Wang⁸, Sicong Zhu^{1

5}, Jian Wu^{2

4}

Affiliations

¹ Hubei Province Key Laboratory of Systems Science in Metallurgical Process, College of Science, The State Key Laboratory for Refractories and Metallurgy, Wuhan University of Science and Technology, Wuhan 430081, China.
² College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha 410073, China.
³ Key Laboratory of Nanodevices and Applications and Key Laboratory of Nanophotonic Materials and Devices, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, Jiangsu 215123, China.
⁴ Department of Chemistry, Shanghai Key Laboratory of Molecular Catalysts and Innovative Materials, Fudan University, Shanghai 200433, China.
⁵ Key Laboratory of Metallurgical Equipment and Control Technology, Key Laboratory of Mechanical Transmission and Manufacturing Engineering, Wuhan University of Science and Technology, Wuhan 430081, China.
⁶ Hongzhiwei Technology (Shanghai) Co. Ltd., 1599 Xinjinqiao Road, Pudong, Shanghai 201206, China.
⁷ College of Physical Science & Technology, Central China Normal University, Wuhan 430079, China.
⁸ Helmholtz Institute Ulm, Ulm D89081, Germany.

PMID: 36200790
DOI: 10.1021/acs.jpclett.2c01973

Abstract

Black arsenic phosphorus (b-As_xP_1-x) is expected to be one of the primary materials for future photonic devices. However, the x-factor is randomly estimated and applied in photonic devices in current studies, rather than systematically analyzing it for a comprehensive understanding. Herein, As_xP_1-x switches from a direct band gap semiconductor to an indirect band gap one at x = 0.75. As_xP_1-x at x ≤ 0.25 is capable of broadband absorption, while b-As_xP_1-x at x ≥ 0.75 can only absorb at specific wavelengths in the perspective of the electron energy transition. Additionally, the optoelectronic response of the integral field-effect transistor configurations constructed with b-As_xP_1-x is investigated systematically as a photodetector device. The photonic response characteristics show high polarization sensitivity at x ≥ 0.75, but a typical circuit system signal at x ≤ 0.25. These results suggest that b-As_xP_1-x with high concentration differences is a perfect candidate for photonic material.