Ambipolar steep-slope nanotransistors with Janus MoSSe/graphene heterostructures

Xinjiang Zhang; Anping Huang; Zhisong Xiao; Mei Wang; Jing Zhang; Paul K Chu

doi:10.1088/1361-6528/ac96f5

Ambipolar steep-slope nanotransistors with Janus MoSSe/graphene heterostructures

Nanotechnology. 2022 Oct 19;34(1). doi: 10.1088/1361-6528/ac96f5.

Authors

Xinjiang Zhang¹, Anping Huang¹, Zhisong Xiao¹, Mei Wang¹, Jing Zhang², Paul K Chu³

Affiliations

¹ School of Physics, Beihang University, Beijing 100191, People's Republic of China.
² Microelectronics Department, North China University of Technology, Beijing 100041, People's Republic of China.
³ Department of Physics, Department of Materials Science and Engineering, and Department of Biomedical Engineering, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong, People's Republic of China.

PMID: 36191490
DOI: 10.1088/1361-6528/ac96f5

Abstract

The transfer characteristics and switching mechanism of the steep-slope transistor composed of the graphene/Janus MoSSe heterostructure are investigated by quantum transport calculation. The Schottky barrier height at the Gr/SMoSe interface and tunneling width between the channel and drain can be tuned by the gate voltage, so that the device exhibits ambipolar switching with two minima in the subthreshold swing slope. 34 and 29 mV decade^-1subthreshold swings can be achieved and the on/off ratios are over 10⁶and 10⁸for the different switching mechanisms. The device provides a solution and guidance for the future design of low-power, high-performance devices.

Keywords: Dirac source; steep-slope transistor; van der Waals heterostructures.