Solution Deposition for Chalcogenide Perovskites: A Low-Temperature Route to BaMS3 Materials (M = Ti, Zr, Hf)

Jonathan W Turnley; Kiruba Catherine Vincent; Apurva A Pradhan; Isabel Panicker; Ryan Swope; Madeleine C Uible; Suzanne C Bart; Rakesh Agrawal

doi:10.1021/jacs.2c06985

Solution Deposition for Chalcogenide Perovskites: A Low-Temperature Route to BaMS₃ Materials (M = Ti, Zr, Hf)

J Am Chem Soc. 2022 Oct 12;144(40):18234-18239. doi: 10.1021/jacs.2c06985. Epub 2022 Sep 29.

Authors

Jonathan W Turnley¹, Kiruba Catherine Vincent¹, Apurva A Pradhan¹, Isabel Panicker¹, Ryan Swope¹, Madeleine C Uible², Suzanne C Bart², Rakesh Agrawal¹

Affiliations

¹ Davidson School of Chemical Engineering, Purdue University, West Lafayette, Indiana 47907, United States.
² H. C. Brown Laboratory, Department of Chemistry, Purdue University, West Lafayette, Indiana 47907, United States.

PMID: 36173442
DOI: 10.1021/jacs.2c06985

Abstract

Chalcogenide perovskites, including BaZrS₃, have been suggested as highly stable alternatives to halide perovskites. However, the synthesis of chalcogenide perovskites has proven to be a significant challenge, often relying on excessively high temperatures and methods that are incompatible with device integration. In this study, we developed a solution-based approach to the deposition of BaZrS₃. This method utilizes a combination of a soluble barium thiolate and nanoparticulate zirconium hydride. Following solution-based deposition of the precursors and subsequent sulfurization, BaZrS₃ can be obtained at temperatures as low as 500 °C. Furthermore, this method was extended to other chalcogenide perovskite (BaHfS₃) and perovskite-related (BaTiS₃) materials.