Bi0.33(Bi6S9)Br compositing in Bi2S3 bulk materials forwards high thermoelectric properties

Jun Guo; Zi-Yuan Wang; Lin Chen; Yu-Ke Zhu; Ying Zhou; Quan Shan; Jing Feng; Zhen-Hua Ge

doi:10.1039/d2cp02805k

Bi_0.33(Bi₆S₉)Br compositing in Bi₂S₃ bulk materials forwards high thermoelectric properties

Phys Chem Chem Phys. 2022 Oct 12;24(39):24290-24295. doi: 10.1039/d2cp02805k.

Authors

Jun Guo¹, Zi-Yuan Wang¹, Lin Chen¹, Yu-Ke Zhu¹, Ying Zhou², Quan Shan¹, Jing Feng¹, Zhen-Hua Ge¹

Affiliations

¹ Faculty of Materials Science and Engineering, Kunming University of Science and Technology, Kunming, 650093, China. zge@kust.edu.cn.
² Yunnan Provincial Academy of Science and Technology, Kunming 650093, China.

PMID: 36172840
DOI: 10.1039/d2cp02805k

Abstract

The hexagonal Bi_0.33(Bi₆S₉)Br intermediate was incorporated to enhance the thermoelectric properties of Bi₂S₃ by a facile synthesis process. As a result of the increase of carrier concentration caused by Br diffusion doping and the enhancement of phonon scattering caused by pores, point defects, and secondary phase interfaces, a maximum ZT value of 0.64 was achieved at 773 K in Bi₂S₃ + 5% Bi_0.33(Bi₆S₉)Br. This study provides a strategy for achieving Br doping in the Bi₂S₃ system by adding the Bi_0.33(Bi₆S₉)Br intermediate alloy, while the nanostructure was maintained in the matrix, which may be also suitable for other thermoelectric materials to obtain higher performance.