Cu2Te Incorporation-Induced High Average Thermoelectric Performance in p-Type Bi2Te3 Alloys

ACS Appl Mater Interfaces. 2022 Oct 12;14(40):45582-45589. doi: 10.1021/acsami.2c13527. Epub 2022 Sep 28.

Abstract

p-Type (Bi, Sb)2Te3 alloys are attractive materials for near-room-temperature thermoelectric applications due to their high atomic masses and large spin-orbit interactions. However, their narrow band gaps originating from spin-orbit interactions lead to bipolar excitation, thereby limiting average thermoelectrics within a local temperature region (300-400 K). Here, we introduce Cu2Te into the Bi0.3Sb1.7Te3 (BST) lattice to implement high thermoelectrics over a wide temperature range. The carrier concentration is synergistically modulated via Cu substitution and the evolution of intrinsic point defects (antisites and vacancies). Furthermore, the chain effect caused by Cu2Te incorporation in BST is reflected in the improvement of the weighted mobility μW, thereby enhancing the power factor in the whole temperature range. Extrinsic and intrinsic defects due to the incorporation of Cu2Te lead to a significant reduction in the lattice thermal conductivity κL, which is further demonstrated by Raman spectroscopy. Combining κL and μW, the quantity factor B increases from 0.5 to 1 with increasing Cu2Te content due to not only the reduction of κL but also a significant improvement in electrical properties. Eventually, a peak figure of merit (zT) of ∼1.15 at 423 K is achieved in BST-Cu2Te samples, and an average figure of merit (zTave) of ∼1.12 (350-500 K) surpasses other excellent p-type Bi2Te3-based thermoelectrics. Such a synergistic effect can facilitate near-room-temperature thermoelectric applications of Bi2Te3-based alloys and provide chances for the technology space in thermoelectrics.

Keywords: Sb)2Te3 alloys; average figure of merit; defect modulation; lattice thermal conductivity; p-type (Bi; thermoelectricity; weighted mobility.