Line-rotated remapping for high-resolution electron backscatter diffraction

Yongzhe Wang; Nicolas Brodusch; Raynald Gauvin; Yi Zeng

doi:10.1016/j.ultramic.2022.113623

Line-rotated remapping for high-resolution electron backscatter diffraction

Ultramicroscopy. 2022 Dec:242:113623. doi: 10.1016/j.ultramic.2022.113623. Epub 2022 Sep 17.

Authors

Yongzhe Wang¹, Nicolas Brodusch², Raynald Gauvin², Yi Zeng³

Affiliations

¹ The State Key Lab of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, 1295 Dingxu Road, Shanghai 200050, China; Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China.
² Minning and Materials Engineering Department, McGill University, 3610 University Street, Montreal, Quebec H3A 2B2, Canada.
³ The State Key Lab of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, 1295 Dingxu Road, Shanghai 200050, China. Electronic address: zengyi@mail.sic.ac.cn.

PMID: 36150291
DOI: 10.1016/j.ultramic.2022.113623

Abstract

A novel approach, termed line-rotated remapping (LRR), for high resolution electron backscatter diffraction is proposed to remap patterns with large rotation. In LRR, the displacements during the first-pass cross-correlation is modified to a function of the corresponding Kikuchi lines and the points on the reference pattern. Then, the finite rotation matrix to remap the test pattern to a similar orientation of the reference pattern is determined using the parameters of the Kikuchi lines. We apply LRR to simulated Si patterns with random orientations, and obtain measurement errors below ∼1.0 × 10^-3 for lattice rotations up to ∼26°. The maximum angle that may be remapped by LRR decreases with the distance between the specimen and the screen, which in turn reduces the number of matched Kikuchi lines. We also employ LRR in experiments to quantitatively characterize rotations and elastic strains of a Ni single crystal subject to nanoindentation and tension measurements. Although more experimental data on pattern center and image contrast are required to properly assess the performance of LRR, our method is a promising technique to improve strain measurements in the presence of large rotations.

Keywords: Elastic strain; High-resolution EBSD; Lattice rotation; Line-rotated remapping.