Data recording based on the phase transition between amorphous and crystalline phases in a phase-change material (PCM) generally consumes a large amount of operation energy. Heat confinement and scaling down of the contact area between the PCM and electrode are effective strategies for reducing the operation energy in the memory device. Contrary to conventional PCM, such as Ge-Sb-Te compounds (GST), Cr2Ge2Te6 (CrGT) exhibits low thermal conductivity and low-energy memory operation characteristics even in a relatively large contact area. Herein, we show that the operation energy of the CrGT-based memory device is greatly reduced by scaling down. Based on the present results, an operation energy at subpico J order, which was achieved using carbon nanotubes or graphene nanoribbon in the GST-based device, can be realized in the contact area comparable to the product level in the CrGT-based device. The numerical simulation suggests that small thermal and electrical conductivities enhance the thermal efficiency, resulting in a small operation energy for amorphization. It was also found that the residual metastable phase after the amorphization process increased the operation energy for crystallization by the simulation. In other words, these results indicate that further small operation energy can be realized in the CrGT-based device by reducing the metastable phase volume.
Keywords: Cr−Ge−Te; inverse resistance change; numerical simulation; phase-change material; thermal efficiency.