Random networks of nanoparticle-based memristive switches enable pathways for emulating highly complex and self-organized synaptic connectivity together with their emergent functional behavior known from biological neuronal networks. They therefore embody a distinct class of neuromorphic hardware architectures and provide an alternative to highly regular arrays of memristors. Especially, networks of memristive nanoparticles (NPs) poised at the percolation threshold are promising due to their capabilities of showing brain-like activity such as critical dynamics or long-range temporal correlation (LRTC), which are closely connected to the computational capabilities in biological neuronal networks. Here, we adapt this concept to networks of Ag-NPs poised at the electrical percolation threshold, where the memristive properties are governed by electro-chemical metallization. We show that critical dynamics and LRTC are preserved although the nature of individual memristive gaps throughout the network is fundamentally changed by filling the gaps with an insulating matrix. The results in this work generate important contributions towards the practical applicability of critical dynamics and LRTC in percolating NP networks by elucidating the consequences of NP network encapsulation, which is considered as an important step towards device integration.
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