AC parallel local oxidation of silicon

Zahra Hemmatian; Denis Gentili; Marianna Barbalinardo; Vittorio Morandi; Luca Ortolani; Giampiero Ruani; Massimiliano Cavallini

doi:10.1039/c9na00445a

AC parallel local oxidation of silicon

Nanoscale Adv. 2019 Sep 3;1(10):3887-3891. doi: 10.1039/c9na00445a. eCollection 2019 Oct 9.

Authors

Zahra Hemmatian¹, Denis Gentili¹, Marianna Barbalinardo¹, Vittorio Morandi², Luca Ortolani², Giampiero Ruani¹, Massimiliano Cavallini¹

Affiliations

¹ Istituto per lo Studio dei Materiali Nanostrutturati, Consiglio Nazionale delle Ricerche Via P. Gobetti 101 40129 Bologna Italy massimilliano.cavallini@cnr.it.
² Istituto per la Microelettronica e i Microsistemi, Consiglio Nazionale delle Ricerche Via P. Gobetti 101 40129 Bologna Italy.

Abstract

Here, we present a suitable advancement of parallel local oxidation nanolithography, demonstrating its feasibility in alternate current mode (AC-PLON). For demonstration, we fabricated model structures consisting of an array of parallel nanostripes of electrochemical SiO _x with a controlled roughness. Besides, we proved the repeatability of AC-PLON and its integrability with conventional parallel local oxidation nanolithography.