Room-Temperature Ferromagnetism in Cu/Co Co-Doped ZnO Nanoparticles Prepared by the Co-Precipitation Method: For Spintronics Applications

ACS Omega. 2022 Aug 31;7(36):32184-32193. doi: 10.1021/acsomega.2c03375. eCollection 2022 Sep 13.

Abstract

In current work, pure ZnO and Zn0.96-x Cu0.04Co x O (0 ≤ x ≤ 0.05) nanoparticles were synthesized by the co-precipitation method. Structural analysis and phase determination of the formed nanoparticles was carried out using X-ray diffraction (XRD) and Williamson-Hall plots. The hexagonal wurtzite structure was manifested by all the samples with divergent microstructures. The change in lattice parameters, bond length, dislocation density, and lattice strain indicates that Cu and Co were successfully incorporated. Average crystallite size was found to be in the range of 32.16-45.42 nm for various doping concentrations. Field emission scanning electron microscopy results exhibited that the surface morphology is an amalgam of spherical-like and hexagon-like structures. Spherical-shaped grains were homogeneous and evenly distributed all over the structure. Fourier transform infrared spectra indicated that the absorption bands were blue-shifted with increasing Co concentration. The UV-visible absorption spectra showed high absorption in the UV region and weak absorption in the visible region. An increase in the energy band gap for the maximum absorption peak was observed from 3.49 eV for ZnO to 3.88 eV for Zn0.91Cu0.04Co0.05O. The Burstein-Moss effect explained the noticed blue shift in absorption spectra and energy band gaps. The vibrating sample magnetometer study revealed the change in the diamagnetic behavior of pure ZnO to the ferromagnetic behavior of the prepared nanoparticles at room temperature for different doping concentrations. In the current study, we have developed the room-temperature ferromagnetism (RTFM) for Cu and Co co-doped ZnO nanoparticles. Since RTFM is the key objective for dilute magnetic semiconductors, therefore it can be served as the desirable expectant for spintronics applications with improved functionalities and device concepts.