Tin-based perovskite solar cells (PSCs) have recently attracted extensive attention as a promising alternative to lead-based counterparts due to their low toxicity and narrow band gap. However, the severe open-circuit voltage (Voc) loss remains one of the most significant obstacles to further improving photovoltaic performance. Herein, we report an effective approach to reducing the Voc loss of tin-based PSCs. We find that introducing ethylammonium bromide (EABr) as an additive into the tin perovskite film can effectively reduce defect density both in the tin perovskite film and at the surface as well as optimize the energy level alignment between the perovskite layer and [6,6]-phenyl-C61-butyric acid methyl ester (PCBM) transport material, thereby suppressing nonradiative recombination both in the bulk film and at the interface. Furthermore, it is demonstrated that the Voc loss is gradually mitigated along with increasing storage duration due to the slow passivation effect. As a result, a remarkable Voc of 0.83 V is achieved in the devices optimized with the EABr additive, which shows a significantly improved power conversion efficiency (PCE) of 10.80% and good stability.
Keywords: EABr additive; low toxicity; reduced Voc loss; suppressed nonradiative recombination; tin perovskite solar cells.