As the importance of ion-assisted surface processing based on low-temperature plasma increases, the monitoring of ion energy impinging into wafer surfaces becomes important. Monitoring methods that are noninvasive, real-time, and comprise ion collision in the sheath have received much research attention. However, in spite of this fact, most research was performed in invasive, not real-time, and collisionless ion sheath conditions. In this paper, we develop a noninvasive real-time IED monitoring system based on an ion trajectory simulation where the Monte Carlo collision method and an electrical model are adopted to describe collisions in sheaths. We technically, theoretically, and experimentally investigate the IED measurement with the proposed method, and compared it with the result of IEDs measured via a quadrupole mass spectrometer under various conditions. The comparison results show that there was no major change in the IEDs as radio-frequency power increased or the IED gradually became broad as gas pressure increased, which was in a good agreement with the results of the mass spectrometer.
Keywords: ion energy distribution (IED); monitoring; noninvasive; plasma; real time.