Humidity sensitivity is evaluated for chemically synthesized ZnAl2O4/Al devices. We succeeded in synthesizing the ZnAl2O4/Al device by applying chemical techniques only. Hydrothermal treatment for the anodized aluminum (AlOx/Al) gives us the device of the ZnAl2O4/Al structure. All fabrication processes were conducted under 400 °C. The key was focusing on ZnAl2O4 as the sensing material instead of MgAl2O4, which is generally investigated as the humidity sensor. The evaluation of this ZnAl2O4/Al device clarified its effectiveness as a sensor. Both electrical capacitance, Cp, and the resistivity, Rp, measured by an LCR meter, obviously responded to the humidity with good sensitivity and appreciable repeatability. Our synthesis technique is possible in principle to improve on the process for the device with a complex structure providing a large surface area. These characteristics are believed to expand the application study of spinel aluminate devices as the sensor.
Keywords: ZnAl2O4; anodization; device design; environmental monitoring; gas sensor; humidity; hydrothermal synthesis; oxide; semiconductor.