Continuous Single-Crystalline GaN Film Grown on WS2 -Glass Wafer

Yue Yin; Bingyao Liu; Qi Chen; Zhaolong Chen; Fang Ren; Shuo Zhang; Zhetong Liu; Rong Wang; Meng Liang; Jianchang Yan; Jingyu Sun; Xiaoyan Yi; Tongbo Wei; Junxi Wang; Jinmin Li; Zhongfan Liu; Peng Gao; Zhiqiang Liu

doi:10.1002/smll.202202529

Continuous Single-Crystalline GaN Film Grown on WS₂ -Glass Wafer

Small. 2022 Oct;18(41):e2202529. doi: 10.1002/smll.202202529. Epub 2022 Aug 20.

Authors

Yue Yin^{1

2}, Bingyao Liu^{3

4

5}, Qi Chen^{1

2}, Zhaolong Chen^{5

6}, Fang Ren^{1

2}, Shuo Zhang^{1

2}, Zhetong Liu^{3

4

5}, Rong Wang⁵, Meng Liang^{1

2}, Jianchang Yan^{1

2}, Jingyu Sun^{5

7}, Xiaoyan Yi^{1

2}, Tongbo Wei^{1

2}, Junxi Wang^{1

2}, Jinmin Li^{1

2}, Zhongfan Liu^{4

5

6}, Peng Gao³, Zhiqiang Liu^{1

2}

Affiliations

¹ Research and Development Center for Semiconductor Lighting Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China.
² Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China.
³ Electron Microscopy Laboratory, and International Center for Quantum Materials, School of Physics, Peking University, Beijing, 100871, China.
⁴ Academy for Advanced Interdisciplinary Studies, Peking University, Beijing, 100871, China.
⁵ Beijing Graphene Institute (BGI), Beijing, 100095, China.
⁶ Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, China.
⁷ College of Energy, Soochow Institute for Energy and Materials Innovations, Jiangsu Provincial Key Laboratory for Advanced Carbon Materials and Wearable Energy Technologies, Soochow University, Suzhou, 215006, China.

PMID: 35986697
DOI: 10.1002/smll.202202529

Abstract

Use of 2D materials as buffer layers has prospects in nitride epitaxy on symmetry mismatched substrates. However, the control of lattice arrangement via 2D materials at the heterointerface presents certain challenges. In this study, the epitaxy of single-crystalline GaN film on WS₂ -glass wafer is successfully performed by using the strong polarity of WS₂ buffer layer and its perfectly matching lattice geometry with GaN. Furthermore, this study reveals that the first interfacial nitrogen layer plays a crucial role in the well-constructed interface by sharing electrons with both Ga and S atoms, enabling the single-crystalline stress-free GaN, as well as a violet light-emitting diode. This study paves a way for the heterogeneous integration of semiconductors and creates opportunities to break through the design and performance limitations, which are induced by substrate restriction, of the devices.

Keywords: 2D materials; GaN; amorphous substrates; single-crystalline.

Abstract

Grants and funding