Electrochemical epitaxial PbTe nanowires photodetector for NIR response

Zhongmin Guo; Zhisheng Zhang; Ruiyang Yan; Shuanglong Feng

doi:10.1088/1361-6528/ac8b17

Electrochemical epitaxial PbTe nanowires photodetector for NIR response

Nanotechnology. 2022 Sep 8;33(48). doi: 10.1088/1361-6528/ac8b17.

Authors

Zhongmin Guo^{1

2}, Zhisheng Zhang², Ruiyang Yan², Shuanglong Feng^{1

2

3}

Affiliations

¹ College of Materials Science and Engineering, Chongqing University of Technology, Chongqing 400054, People's Republic of China.
² Micro-Nano Manufacturing and System Integration Center, Chongqing Institute of Green and Intelligent Technology, Chinese Academy of Sciences, Chongqing 400714, People's Republic of China.
³ Chongqing School, University of Chinese Academy of Sciences, Chongqing 400714, People's Republic of China.

PMID: 35985236
DOI: 10.1088/1361-6528/ac8b17

Abstract

Lead telluride nanowires deposited by electrochemical atomic layers have broad application prospects in the field of photodetectors. In this work, using the method of electrochemical atomic layer deposition, we obtained different morphologies of lead telluride materials by controlling the deposition parameters, such as deposition time, temperature, and potential, and characterized them using SEM, TEM, XPS, and other techniques. A lead telluride nanowire detector with good performance was prepared. The photoresponsivity of the detector is 102 mA W^-1, the detectivity is 2.1 × 10⁸Jones, and the response time and recovery time are 0.52 s and 0.54 s respectively at 2.7μm wavelength laser irradiation.

Keywords: PbTe nanowires; electrochemical atomic layer deposition; photodetector.