Reliable and controllable doping of 2D transition metal dichalcogenides is an efficient approach to tailor their physicochemical properties and expand their functional applications. However, precise control over dopant distribution and scalability of the process remains a challenge. Here, we report a general method to achieve scalable in situ doping of centimeter-sized bicontinuous nanoporous ReSe2 films with transition metal atoms via surface coalloy growth. The distinct strains induced by the bending curvature of nanoporous structures and uniform dopants result in a local 1T' to 1T″ structure phase transition over nanoporous ReSe2 films. The as-prepared nanoporous Ru-ReSe2 with high 1T″ phase exhibits preferable electrochemical activity in hydrogen evolution reaction. The work demonstrates a unique and general approach to synthesize uniformly-doped transition metal dichalcogenides with 3D bicontinuous nanoporous structure, which can be scaled up to batch production for various applications.
Keywords: 1T″ phase; doping; nanoporous structure; strain; transition metal dichalcogenides.