High-Performance Resistive Random Access Memories Based on Two-Dimensional HAPbI4 Organic-Inorganic Hybrid Perovskite

Binglin Liu; Junan Lai; Daofu Wu; Liye Li; Kaijin Kang; Wei Hu; Xiaosheng Tang

doi:10.1021/acs.jpclett.2c01786

High-Performance Resistive Random Access Memories Based on Two-Dimensional HAPbI₄ Organic-Inorganic Hybrid Perovskite

J Phys Chem Lett. 2022 Aug 25;13(33):7653-7659. doi: 10.1021/acs.jpclett.2c01786. Epub 2022 Aug 12.

Authors

Binglin Liu¹, Junan Lai¹, Daofu Wu¹, Liye Li¹, Kaijin Kang¹, Wei Hu¹, Xiaosheng Tang^{1

2

3}

Affiliations

¹ Key Laboratory of Optoelectronic Technology and Systems of Ministry of Education, College of Optoelectronic Engineering, Chongqing University, Chongqing 400044, People's Republic of China.
² College of Optoelectronic Engineering, Chongqing University of Posts and Telecommunications, Chongqing 400065, People's Republic of China.
³ School of Materials Science and Engineering, Zhengzhou University, Zhengzhou, Henan 450001, People's Republic of China.

PMID: 35959984
DOI: 10.1021/acs.jpclett.2c01786

Abstract

Organic-inorganic hybrid perovskites have attracted extensive attention for potential memory applications because of their excellent properties, such as high charge carrier mobility and fast ion migration. Herein, the two-dimensional HAPbI₄ perovskite with an octahedral structure and high stability was prepared by a facile solution method. Moreover, the resistive random access memory (RRAM) with the Ag/PMMA/HAPbI₄/ITO structure has been successfully fabricated by spin coating and vacuum thermal evaporation. The as-prepared RRAM device based on HAPbI₄ demonstrated superior resistive switching performance. The on/off ratio is as high as 10⁵, and the corresponding retention of the device exceeds 10 000 s; furthermore, the RRAM device could be kept stable after being kept in the air for 24 weeks.