Graphene resonant sensors have shown strong competitiveness with respect to sensitivity and size. To advance the applications of graphene resonant sensors, the damage behaviors of graphene harmonic oscillators after thermal annealing and laser irradiation were investigated by morphology analysis and frequency domain vibration characteristics. The interface stress was proven to be the key factor that directly affected the yield of resonators. The resulting phenomenon could be improved by appropriately controlling the annealing temperature and size of resonators, thereby achieving membrane intactness of up to 96.4%. However, micro-cracks were found on the graphene sheets when continuous wave (CW) laser power was more than 4 mW. Moreover, the fluctuating light energy would also cause mechanical fatigue in addition to the photothermal effect, and the threshold damage power for the sinusoidally modulated laser was merely 2 mW. In this way, based on the amplitude-frequency surface morphology of the graphene resonator, the thermal time constant of the order of a few microseconds was confirmed to evaluate the damage of the graphene oscillator in situ and in real time, which could be further extended for those resonators using other 2D materials.
Keywords: film thermal damage; graphene resonator; interface stress; thermal time constant.