We present a theoretical model describing photoelectron transport dynamics in stepwise-doped GaAs photocathodes. Built-in electric field caused by the doping structure is analyzed, and the time-evolution of electron concentration in the active layer induced by a femtosecond laser pulse is solved. The predictions of the model show excellent agreement with the experimental data measured with pump-probe transient reflectometry, demonstrating the capability of the theoretical model in predicting photoelectron behaviors in real devices. Comparisons are also made between this stepwise doping model and the conventional gradient doping model with a continuous doping profile, thereby providing the first quantitative evaluation of the effectiveness and the limitation of the gradient doping model in describing actual stepwise-doped devices.
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