Initial synthesis of semiconducting oxides leaves behind poorly controlled concentrations of unwanted atomic-scale defects that influence numerous electrical, optical, and reactivity properties. We have discovered through self-diffusion measurements and first-principles computations that poison-free oxide surfaces inject interstitial oxygen atoms into the crystalline solid when simply contacted with liquid water near room temperature. These interstitials diffuse quickly to depths of 20 nm-2 μm and are likely to eliminate prominent classes of unwanted defects or neutralize their action. The mild conditions of operation access a regime for oxide fabrication that relaxes important thermodynamic constraints that hamper defect regulation by conventional methods at higher temperatures. The surface-based approach appears well-suited for use with nanoparticles, porous oxides, and thin films for applications in advanced electronics, renewable energy storage, photocatalysis, and photoelectrochemistry.
Keywords: Ga2O3; TiO2; ZnO; defects; interstitials; metal oxides; oxygen; vacancies.