Integration of H2V3O8 nanowires and a GaN thin film for self-powered UV photodetectors

Yi Dou; Yujun Liang; Haoran Li; Yali Xue; Hanlin Ye; Yongsheng Han

doi:10.1039/d2cc02773a

Integration of H₂V₃O₈ nanowires and a GaN thin film for self-powered UV photodetectors

Chem Commun (Camb). 2022 Jul 28;58(61):8548-8551. doi: 10.1039/d2cc02773a.

Authors

Yi Dou^{1

2}, Yujun Liang^{1

2}, Haoran Li^{1

2}, Yali Xue^{1

2}, Hanlin Ye^{1

2}, Yongsheng Han³

Affiliations

¹ Engineering Research Center of Nano-Geomaterials of Ministry of Education, China University of Geosciences, Wuhan 430074, China. yujunliang@sohu.com.
² Faculty of Materials Science and Chemistry, China University of Geosciences, Wuhan 430074, China.
³ State Key Laboratory of Multiphase Complex Systems, Institute of Process Engineering, Chinese Academy of Sciences, Beijing 100190, China. yshan@ipe.ac.cn.

PMID: 35815615
DOI: 10.1039/d2cc02773a

Abstract

H₂V₃O₈/GaN n-n heterojunction ultraviolet photodetectors are fabricated via a facile dip-coating method. The Schottky junction between the GaN and H₂V₃O₈ builds a built-in electric field to achieve the self-powered phenomenon. The photodetector presents a high photocurrent (0.23 μA) and a fast response speed (less than 0.3 s) at 0 V bias and under 365 nm light illumination (24.50 mW cm^-2). Furthermore, the photocurrent increases steadily as the light intensity increases from 0.53 to 24.50 mW cm^-2. The H₂V₃O₈/GaN heterojunction holds great potential to realize high-performance hybrid PDs.