Trench FinFET Nanostructure with Advanced Ferroelectric Nanomaterial HfZrO2 for Sub-60-mV/Decade Subthreshold Slope for Low Power Application

Siao-Cheng Yan; Chen-Han Wu; Chong-Jhe Sun; Yi-Wen Lin; Yi-Ju Yao; Yung-Chun Wu

doi:10.3390/nano12132165

Trench FinFET Nanostructure with Advanced Ferroelectric Nanomaterial HfZrO₂ for Sub-60-mV/Decade Subthreshold Slope for Low Power Application

Nanomaterials (Basel). 2022 Jun 23;12(13):2165. doi: 10.3390/nano12132165.

Authors

Siao-Cheng Yan¹, Chen-Han Wu¹, Chong-Jhe Sun¹, Yi-Wen Lin¹, Yi-Ju Yao¹, Yung-Chun Wu¹

Affiliation

¹ Department of Engineering and System Science, National Tsing Hua University, Hsinchu 30013, Taiwan.

Abstract

Ferroelectric fin field-effect transistors with a trench structure (trench Fe-FinFETs) were fabricated and characterized. The inclusion of the trench structures improved the electrical characteristics of the Fe-FinFETs. Moreover, short channel effects were suppressed by completely surrounding the trench channel with the gate electrodes. Compared with a conventional Fe-FinFET, the fabricated trench Fe-FinFET had a higher on-off current ratio of 4.1 × 10⁷ and a steep minimum subthreshold swing of 35.4 mV/dec in the forward sweep. In addition, the fabricated trench Fe-FinFET had a very low drain-induced barrier lowering value of 4.47 mV/V and immunity to gate-induced drain leakage. Finally, a technology computer-aided design simulation was conducted to verify the experimental results.

Keywords: FeFET; FinFET; hafnium zirconium oxide; steep slope; trench.

Abstract

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