The surface plasmon resonance in low-dimensional semiconducting materials is a source of valuable scientific phenomenon which opens widespread prospects for novel applications. A systematic study to shed light on the propagation of plasmons at the interface of GaN nanowire is reported. A comprehensive analysis of the interaction of light with GaN nanowires and the propagation of plasmons is carried out to uncover further potentials of the material. The results obtained on the basis of calculations designate the interaction of light with nanowires, which produced plasmons at the interface that propagate along the designed geometry starting from the center of the nanowire towards its periphery, having more flux density at the center of the nanowire. The wavelength of light does not affect the propagation of plasmons but the flux density of plasmons appeared to increase with the wavelength. Similarly, an increment in the flux density of plasmons occurs even in the case of coupled and uncoupled nanowires with wavelength, but more increment occurs in the case of coupling. Further, it was found that an increase in the number of nanowires increases the flux density of plasmons at all wavelengths irrespective of uniformity in the propagation of plasmons. The findings point to the possibility of tuning the plasmonics by using a suitable number of coupled nanowires in assembly.
Keywords: GaN; coupling; final element analysis; nanowires; plasmons.