Ultra-wide bandgap semiconductor Ga2O3 power diodes

Jincheng Zhang; Pengfei Dong; Kui Dang; Yanni Zhang; Qinglong Yan; Hu Xiang; Jie Su; Zhihong Liu; Mengwei Si; Jiacheng Gao; Moufu Kong; Hong Zhou; Yue Hao

doi:10.1038/s41467-022-31664-y

Ultra-wide bandgap semiconductor Ga₂O₃ power diodes

Nat Commun. 2022 Jul 6;13(1):3900. doi: 10.1038/s41467-022-31664-y.

Authors

Jincheng Zhang¹, Pengfei Dong¹, Kui Dang¹, Yanni Zhang¹, Qinglong Yan¹, Hu Xiang¹, Jie Su¹, Zhihong Liu¹, Mengwei Si², Jiacheng Gao³, Moufu Kong³, Hong Zhou⁴, Yue Hao¹

Affiliations

¹ State Key Discipline Laboratory of Wide Bandgap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an, 710071, China.
² Department of Electronic Engineering, Shanghai Jiao Tong University, Shanghai, 200240, China.
³ State Key Laboratory of Electronic Thin Films and Integrated Devices of China, University of Electronic Science and Technology of China, Chengdu, 61005, China.
⁴ State Key Discipline Laboratory of Wide Bandgap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an, 710071, China. hongzhou@xidian.edu.cn.

Abstract

Ultra-wide bandgap semiconductor Ga₂O₃ based electronic devices are expected to perform beyond wide bandgap counterparts GaN and SiC. However, the reported power figure-of-merit hardly can exceed, which is far below the projected Ga₂O₃ material limit. Major obstacles are high breakdown voltage requires low doping material and PN junction termination, contradicting with low specific on-resistance and simultaneous achieving of n- and p-type doping, respectively. In this work, we demonstrate that Ga₂O₃ heterojunction PN diodes can overcome above challenges. By implementing the holes injection in the Ga₂O₃, bipolar transport can induce conductivity modulation and low resistance in a low doping Ga₂O₃ material. Therefore, breakdown voltage of 8.32 kV, specific on-resistance of 5.24 mΩ⋅cm², power figure-of-merit of 13.2 GW/cm², and turn-on voltage of 1.8 V are achieved. The power figure-of-merit value surpasses the 1-D unipolar limit of GaN and SiC. Those Ga₂O₃ power diodes demonstrate their great potential for next-generation power electronics applications.