Influence of Radiation-Induced Displacement Defect in 1.2 kV SiC Metal-Oxide-Semiconductor Field-Effect Transistors

Gyeongyeop Lee; Jonghyeon Ha; Kihyun Kim; Hagyoul Bae; Chong-Eun Kim; Jungsik Kim

doi:10.3390/mi13060901

Influence of Radiation-Induced Displacement Defect in 1.2 kV SiC Metal-Oxide-Semiconductor Field-Effect Transistors

Micromachines (Basel). 2022 Jun 7;13(6):901. doi: 10.3390/mi13060901.

Authors

Gyeongyeop Lee¹, Jonghyeon Ha¹, Kihyun Kim², Hagyoul Bae², Chong-Eun Kim³, Jungsik Kim¹

Affiliations

¹ Department of Electrical Engineering, Gyeongsang National University (GNU), Jinju 52828, Korea.
² Division of Electronics Engineering and Future Semiconductor Convergence Technology Research Center, Jeonbuk National University, Jeonju 54896, Korea.
³ Department of Control and Instrumentation Engineering, Gyeongsang National University (GNU), Jinju 52828, Korea.

Abstract

The effect of displacement defect on SiC metal-oxide-semiconductor field-effect transistors (MOSFETs) due to radiation is investigated using technology computer-aided design (TCAD) simulation. The position, energy level, and concentration of the displacement defect are considered as variables. The transfer characteristics, breakdown voltage, and energy loss of a double-pulse switching test circuit are analyzed. Compared with the shallow defect energy level, the deepest defect energy level with E_C - 1.55 eV exhibits considerable degradation. The on-current decreases by 54% and on-resistance increases by 293% due to the displacement defect generated at the parasitic junction field-effect transistor (JFET) region next to the P-well. Due to the existence of a defect in the drift region, the breakdown voltage increased up to 21 V. In the double-pulse switching test, the impact of displacement defect on the power loss of SiC MOSFETs is negligible.

Keywords: SiC MOSFET; TCAD simulation; displacement defect; radiation effect.

Grants and funding

The EDA Tool was supported by the IC Design Education Center.