A new approach to the fabrication of graphene field emitters on a variety of substrates at room temperature and in an ambient environment is demonstrated. The required shape and orientation of the graphene flakes along the field are created by the blister-based laser-induced forward transfer of CVD high-quality single-layer graphene. The proposed technique allows the formation of emitting crumpled graphene patterns without losing the quality of the initially synthesized graphene, as shown by Raman spectroscopy. The electron field emission properties of crumpled graphene imprints 1 × 1 mm2 in size were studied. The transferred graphene flakes demonstrated good adhesion and emission characteristics.
Keywords: Raman spectroscopy; crumpled CVD graphene; field electron emission; laser processing; laser-induced forward transfer.