Realizing Single Chip White Light InGaN LED via Dual-Wavelength Multiple Quantum Wells

Yangfeng Li; Cui Liu; Yuli Zhang; Yang Jiang; Xiaotao Hu; Yimeng Song; Zhaole Su; Haiqiang Jia; Wenxin Wang; Hong Chen

doi:10.3390/ma15113998

Realizing Single Chip White Light InGaN LED via Dual-Wavelength Multiple Quantum Wells

Materials (Basel). 2022 Jun 3;15(11):3998. doi: 10.3390/ma15113998.

Authors

Yangfeng Li^{1

2}, Cui Liu³, Yuli Zhang¹, Yang Jiang^{1

2}, Xiaotao Hu^{1

2}, Yimeng Song⁴, Zhaole Su^{1

2}, Haiqiang Jia^{1

2

5}, Wenxin Wang^{1

2

5}, Hong Chen^{1

2

5}

Affiliations

¹ Key Laboratory for Renewable Energy, Beijing Key Laboratory for New Energy Materials and Devices, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.
² Center of Materials and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China.
³ Semiconductor Manufacturing International Corporation, Beijing 100176, China.
⁴ Beijing Key Laboratory for Magneto-Photoelectrical Composite and Interface Science, School of Mathematics and Physics, University of Science and Technology Beijing, Beijing 100083, China.
⁵ Songshan Lake Materials Laboratory, Dongguan 523808, China.

Abstract

Dual-wavelength multiple quantum wells (MQWs) have great potential in realizing high quality illumination, monolithic micro light-emitting diode (LED) displays and other related fields. Here, we demonstrate a single chip white light indium gallium nitride (InGaN) LED via the manipulation of the dual-wavelength MQWs. The MQWs contain four pairs of blue light-emitting MQWs and one pair of green light-emitting QW. The fabricated LED chips with nickel/gold (Ni/Au) as the current spreading layer emit white light with the injection current changing from 0.5 mA to 80 mA. The chromaticity coordinates of (0.3152, 0.329) closing to the white light location in the Commission International de I'Eclairage (CIE) 1931 chromaticity diagram are obtained under a 1 mA current injection with a color rendering index (CRI) Ra of 60 and correlated color temperature (CCT) of 6246 K. This strategy provides a promising route to realize high quality white light in a single chip, which will significantly simplify the production process of incumbent white light LEDs and promote the progress of high-quality illumination.

Keywords: CCT; CRI; InGaN LEDs; single chip; white light.

Abstract

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