Single layer aligned semiconducting single-walled carbon nanotube array with high linear density

Hao Liu; Fengjing Liu; Zhaolou Sun; Xiaoyong Cai; Huijuan Sun; Yuan Kai; Li Chen; Chao Jiang

doi:10.1088/1361-6528/ac7574

Single layer aligned semiconducting single-walled carbon nanotube array with high linear density

Nanotechnology. 2022 Jun 20;33(37). doi: 10.1088/1361-6528/ac7574.

Authors

Hao Liu^{1

2}, Fengjing Liu², Zhaolou Sun^{2

3}, Xiaoyong Cai², Huijuan Sun², Yuan Kai^{2

4}, Li Chen¹, Chao Jiang^{2

4}

Affiliations

¹ The Collaborative Innovation Center of Chemical Science and Engineering, Department of Chemistry, School of Science, Tianjin University, Tianjin 300072, People's Republic of China.
² CAS Key Laboratory of Standardization and Measurement for Nanotechnology & CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, People's Republic of China.
³ School of Materials Science and Engineering, Anyang Institute of Technology, Anyang 455000, People's Republic of China.
⁴ University of Chinese Academy of Science, Beijing 100049, People's Republic of China.

PMID: 35653931
DOI: 10.1088/1361-6528/ac7574

Abstract

Highly ordered semiconducting single-walled carbon nanotubes(sc-SWCNTs) array with high purity, high linear density and controllable manner is strongly desired for carbon-based integrated circuits, yet it remains a big challenge. Herein, close-packed single layered and controllably aligned sc-SWCNTs arrays were obtained through dielectrophoresis using a high purity sc-SWCNT dispersion. Under optimized condition of length and average number of interconnecting junctions across the channel full of aligned sc-SWCNTs, field effect transistors (FETs) with high performance were achieved with both a high on/off current ratio and large carrier mobility. Based on the optimized channel length, by systematically optimizing the dielectrophoresis parameters of the frequency and duration of applied AC voltage (V_pp), the highly ordered sc-SWCNTs arrays with an ultra-high linear density of 54 ± 2 tubesμm^-1showed relatively high device performance of FET. The fabrication process optimized in this report can be further extended and applied in large-area, low-cost carbon-based integrated circuits.

Keywords: aligned sc-SWCNTs; anisotropy; dielectrophoresis; field effect transistor (FET).